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Interfacial Dzyaloshinskii-Moriya interaction (iDMI) has been investigated inCo2FeAl (CFA) ultrathin films of various thicknesses (0.8 nm<tCFA<2 nm) grownon Si substrates, using Pt, W, Ir and MgO buffer or/and capping layers.Vibrating sample magnetometry revealed that magnetization at saturation (Ms)for the Pt and Ir buffered films is higher than the usual Ms of CFA due to theproximity induced magnetization (PIM) in Ir and Pt, estimated to be 19% and27%, respectively. The presence of PIM in these materials is confirmed usingx-ray resonant magnetic reflectivity. Moreover, while no PIM is induced in W,higher PIM is obtained with Pt when it is used as buffer layer rather thancapping layer. Brillouin light scattering (BLS) in the Damon-Eshbach geometryhas been used to investigate iDMI constants and the perpendicular anisotropyfield versus the annealing temperature. The DMI sign has been found to benegative for Pt/CFA and Ir/CFA while it is positive for W/CFA. The thicknessdependence of the effective iDMI constant for stacks involving Pt and W showsthe existence of two regimes similarly to that of the perpendicular anisotropyconstant due to the degradation of the interfaces as the CFA thicknessapproaches the nanometer. The surface iDMI and anisotropy constants of eachstack have been determined for the thickest samples where a linear thicknessdependence of the effective iDMI constant and the effective magnetization hasbeen observed. The interface anisotropy and iDMI constants, investigated forPt/CFA/MgO system, showed different trends with the annealing temperature. Thedecrease of iDMI constant with increasing annealing temperature is probably dueto the electronic structure changes at the interfaces, while the increase ofthe interface anisotropy constant is coherent the interface quality anddisorder enhancement.

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Thickness-dependence of the Dzyaloshinskii-Moriya interaction in Co2FeAl  ultrathin films: effects of the annealing temperature and the heavy metal  material