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We investigate the radiative and nonradiative recombination processes inplanar (In,Ga)N/GaN(0001) quantum wells and (In,Ga)N quantum disks embedded inGaN$(000\bar{1})$ nanowires using photoluminescence spectroscopy under bothcontinuous-wave and pulsed excitation. The photoluminescence intensities ofthese two samples quench only slightly between 10 and 300 K, which is commonlytaken as evidence for high internal quantum efficiencies. However, aside-by-side comparison shows that the absolute intensity of the Ga-polarquantum wells is two orders of magnitude higher than that of the N-polarquantum disks. A similar difference is observed for the initial decay time ofphotoluminescence transients obtained by time-resolved measurements, indicatingthe presence of a highly efficient nonradiative decay channel for the quantumdisks. In apparent contradiction to this conjecture, the decay of both samplesis observed to slow down dramatically after the initial rapid decay.Independent of temperature, the transients approach a power law for longerdecay times, reflecting that recombination occurs between individual electronsand holes with varying spatial separation. Employing a coupled system ofstochastic integro-differential equations taking into account both radiativeand nonradiative Shockley-Read-Hall recombination of spatially separateelectrons and holes as well as their diffusion, we obtain simulated transientsmatching the experimentally obtained ones. The results reveal that evendominant nonradiative recombination conserves the power law decay for(In,Ga)N/GaN{0001} quantum wells and disks.

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Ga-polar (In,Ga)N/GaN quantum wells vs. N-polar (In,Ga)N quantum disks  in GaN nanowires: Comparative analysis of carrier recombination, diffusion,  and radiative efficiency