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Metal-Insulator-Metal tunnel junctions (MIMTJ) are common throughout themicroelectronics industry. The industry standard AlOx tunnel barrier, formedthrough oxygen diffusion into an Al wetting layer, is plagued by internaldefects and pinholes which prevent the realization of atomically-thin barriersdemanded for enhanced quantum coherence. In this work, we employed in situscanning tunneling spectroscopy (STS) along with molecular dynamics simulationsto understand and control the growth of atomically thin Al2O3 tunnel barriersusing atomic layer deposition (ALD). We found that a carefully tuned initialH2O pulse hydroxylated the Al surface and enabled the creation of anatomically-thin Al2O3 tunnel barrier with a high quality M-I interface and asignificantly enhanced barrier height compared to thermal AlOx. Theseproperties, corroborated by fabricated Josephson Junctions, show that ALD Al2O3is a dense, leak-free tunnel barrier with a low defect density which can be akey component for the next-generation of MIMTJs.

Tunneling Spectroscopy of Atomically-Thin Al2O3 Films for Tunnel Junctions