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Transition metal dichalcogenide field-effect transistors (FETs) have beenactively explored for low-power electronics, light detection, and sensing.Albeit promising, their performance is strongly limited by low-frequency noise(LFN). Here, we report on the study of LFN in MoS$_2$ FETs on SiO$_2$substrates in ambient conditions using photodoping. Using this externalexcitation source allows us to access different non-equilibrium steady statesand cross over different noise regimes. We observe a dependence of the noisepower spectrum with the transient decay time window, approaching $1/f$-typewhen the system is closer to equilibrium, and identify a dependence of the LFNwith channel thickness. Monolayer/bilayer devices exhibit random telegraphnoise for insulating regimes and $1/f$-type Hooge mobility fluctuations (HMF)for conductive regimes. Thicker devices exhibit mainly $1/f$-type carriernumber fluctuations (CNF). In the latter, we observe a photodoping-inducedchange from a near parabolic to a near linear dependence of the inverse $1/f$noise amplitude above the threshold gate voltage. This change indicates acrossover in the LFN mechanism from CNF to HMF. We demonstrate that the studyof conductance and noise under photodoping is an effective tool to identifydominating carrier noise mechanisms in few-atomic-layer FETs for a wide rangeof doping regimes.

Photodoping-driven crossover in low-frequency noise in MoS2 transistors