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Measurement of multiple Andreev reflection (MAR) in a Josephson junction madefrom an InAs heterostructure with epitaxial aluminum is used to quantify thehighly transparent semiconductor-superconductor interface, indicatingnear-unity transmission. The observed temperature dependence of MAR does notfollow a conventional BCS form, but instead agrees with a model in which thedensity of states in the quantum well acquires an effective induced gap, in ourcase 180 {\mu}eV, close to that of the epitaxial superconductor. Carrierdensity dependence of MAR is investigated using a depletion gate, revealing thesubband structure of the semiconductor quantum well, consistent withmagnetotransport experiment of the bare InAs performed on the same wafer.

Transparent Semiconductor-Superconductor Interface and Induced Gap in an Epitaxial Heterostructure Josephson Junction