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The coalescence in dense arrays of spontaneously formed GaN nanowiresproceeds by bundling: adjacent nanowires bend and merge at their top, thusreducing their surface energy at the expense of the elastic energy of bending.We give a theoretical description of the energetics of this bundling process.The bending energy is shown to be substantially reduced by the creation ofdislocations at the coalescence joints. A comparison of experimental andcalculated x-ray diffraction profiles from ensembles of bundled nanowiresdemonstrates that a large part of the bending energy is indeed relaxed byplastic deformation. The residual bending manifests itself by extended tails ofthe diffraction profiles.

Elastic vs. plastic strain relaxation in coalesced GaN nanowires: an x-ray diffraction study