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As we follow Moore's Law and pack more and more components onto each computer chip, we must extend the limits of manufacturing. Looking ahead, efficient sources of light at a wavelength around 6.7 nm are needed for beyond-extreme-ultraviolet (BEUV) lithography, to create integrated circuits beyond the 7-nm logic node. This study measures and models plasmas of Gd and Tb, prepared using a single laser tuned over a broad range of parameters. These plasmas do emit at the desired wavelength, and calculations indicate that a conversion efficiency of 6% could ultimately be realized.

6.7-nm Emission from Gd and Tb Plasmas over a Broad Range of Irradiation Parameters Using a Single Laser