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Understanding quantitatively the heating dynamics in magnetic tunneljunctions (MTJ) submitted to current pulses is very important in the context ofspin-transfer-torque magnetic random access memory development. Here we providea method to probe the heating of MTJ using the RKKY coupling of a syntheticferrimagnetic storage layer as a thermal sensor. The temperature increaseversus applied bias voltage is measured thanks to the decrease of the spin-flopfield with temperature. This method allows distinguishing spin transfer torque(STT) effects from the influence of temperature on the switching field. Theheating dynamics is then studied in real-time by probing the conductancevariation due to spin-flop rotation during heating. This approach provides anew method for measuring fast heating in spintronic devices, particularlymagnetic random access memory (MRAM) using thermally assisted or spin transfertorque writing.

Steady State and Dynamics of Joule Heating in Magnetic Tunnel Junctions Observed via the Temperature Dependence of RKKY Coupling