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Non-local currents and voltages are better able at withstanding thedeleterious effects of dephasing than local currents and voltages in nanoscalesystems. This hypothesis is known to be true in quantum Hall set-ups. We testthis hypothesis in a four terminal quantum spin Hall set up wherein we comparethe local resistance measurement with the non-local one. In addition toinelastic scattering induced dephasing we also test resilience of theresistance measurements in the aforesaid set-ups to disorder and spin-flipscattering. We find the axiom that non-local resistance is less affected by thedetrimental effects of disorder and dephasing to be in general untrue forquantum spin Hall case. This has important consequences since it has beenwidely communicated that non-local transport through edge channels intopological insulators will have potential applications in low powerinformation processing.

Fragility of non-local edge mode transport in the quantum spin Hall state