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We study 95 split gates of different size on a single chip using amultiplexing technique. Each split gate defines a one-dimensional channel on amodulation-doped GaAs/AlGaAs heterostructure, through which the conductance isquantized. The yield of devices showing good quantization decreases rapidly asthe length of the split gates increases. However, for the subset of devicesshowing good quantization, there is no correlation between the electrostaticlength of the one dimensional channel (estimated using a saddle point model),and the gate length. The variation in electrostatic length and theone-dimensional subband spacing for devices of the same gate length exceeds thevariation in the average values between devices of different length. There is aclear correlation between the curvature of the potential barrier in thetransport direction and the strength of the "0.7 anomaly": the conductancevalue of the 0.7 anomaly reduces as the barrier curvature becomes shallower.These results highlight the key role of the electrostatic environment inone-dimensional systems. Even in devices with clean conductance plateaus,random fluctuations in the background potential are crucial in determining thepotential landscape in the active device area such that nominally identicalgate structures have different characteristics.

physical review applied

The effect of split gate size on the electrostatic potential and 0.7  anomaly within one-dimensional quantum wires on a modulation doped  GaAs/AlGaAs heterostructure