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Methods for the creation of thin amorphous silicon dioxide (aSiO2) layers oncrystalline silicon substrates with very high densities of silicon danglingbonds (so called E' centers) have been explored and volume densities of [E']>5x10^18 cm-3 throughout a 60nm thick film have been demonstrated by exposure ofa thermal oxide layer to a low pressure Argon radio frequency plasma. While thegenerated high E' center densities can be annealed completely at 300C, they arecomparatively stable at room temperature with a half life of about one month.Spin relaxation time measurements of these states between T = 5K and T = 70Kshow that the phase relaxation time T2 does not strongly depend on temperatureand compared to SiO2 films of lower E' density, is significantly shortened. Thelongitudinal relaxation time T1 ~195(5)us at room temperature is in agreementwith low-density SiO2. In contrast, T1 ~625(51)us at T = 5K is much shorterthan in films of lower E' density. These results are discussed in the contextof E' centers being used as probe spins for spin-selection rules based singlespin-readout.

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Synthesis of thin silicon dioxide layers with high E' center densities  and investigation of the E' center spin relaxation dynamics for single spin  readout applications