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Tuning GaAs-based quantum emitters to telecom wavelengths makes it possibleto use the existing mature technology for applications in, e.g., long-haulultra-secure communication in the fiber networks. A promising methodre-developed recently is to use a metamorphic InGaAs buffer that redshifts theemission by reducing strain. However, the impact of such a buffer causes also asimultaneous modification of other quantum dot properties. Knowledge of theseeffects is crucial for actual implementations of QD-based non-classical lightsources for quantum communication schemes. Here, we thoroughly study singleGaAs-based quantum dots grown by molecular-beam epitaxy on specially designed,digital-alloy InGaAs metamorphic buffers. With a set of structures varying inthe buffer indium content and providing quantum dot emission through thetelecom spectral range up to 1.6 $\mu$m, we analyze the impact of the bufferand its composition on QD structural and optical properties. We identify themechanisms of quantum dot emission shift with varying buffer composition. Wealso look into the charge trapping processes and compare excitonic propertiesfor different growth conditions with single-dot emission successfully shiftedto both, the second and the third telecom windows.

physical review applied

Impact of MBE-grown (In,Ga)As/GaAs metamorphic buffers on excitonic and  optical properties of single quantum dots with single-photon emission tuned  to the telecom range