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The long-lived and optically addressable spin states of silicon vacancies($\mathrm{V}_\mathrm{Si}$) in 4H-SiC make them promising qubits for quantumcommunication and sensing. These color centers can be created in both thehexagonal (V1) and in the cubic (V2) local crystallographic environments of the4H-SiC host. While the spin of the V2 center can be efficiently manipulated byoptically detected magnetic resonance at room temperature, spin control of theV1 centers above cryogenic temperatures has so far remained elusive. Here, weshow that the dynamic strain of surface acoustic waves can overcome thislimitation and efficiently excite magnetic resonances of V1 centers up to roomtemperature. Based on the width and temperature dependence of the acousticallyinduced spin resonances of the V1 centers, we attribute them to transitionsbetween spin sublevels in the excited state. The acoustic spin control of bothkinds of $\mathrm{V}_\mathrm{Si}$ centers in their excited states opens newways for applications in quantum technologies based on spin-optomechanics.

Identification of acoustically induced spin resonances of Si vacancy centers in 4H-SiC