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Our ability to efficiently detect and generate far-infrared (i.e., terahertz)radiation is vital in areas spanning from biomedical imaging to interstellarspectroscopy. Despite decades of intense research, bridging the terahertz gapbetween electronics and optics remains a major challenge due to the lack ofrobust materials that can efficiently operate in this frequency range, andtwo-dimensional (2D) type-II heterostructures may be ideal candidates to fillthis gap. Herein, using highly accurate many-body perturbation theory withinthe GW plus Bethe-Salpeter equation approach, we predict that a type-IIheterostructure consisting of an electron rich C3N and an electron deficientC3B monolayers can give rise to extraordinary optical activities in the mid- tofar-infrared range. C3N and C3B are two graphene-derived 2D materials that haveattracted increasing research attention. Although both C3N and C3B monolayersare moderate gap 2D materials, and they only couple through the rather weak vander Waals interactions, the bilayer heterostructure surprisingly supportsextremely bright, low-energy interlayer excitons with large binding energies of0.2 ~ 0.4 eV, offering an ideal material with interlayer excitonic states formid-to far-infrared applications at room temperature. We also investigate indetail the properties and formation mechanism of the inter- and intra-layerexcitons.

physical review applied

Stacking up electron-rich and electron-deficient monolayers to achieve  extraordinary mid- to far-infrared excitonic absorption: Interlayer excitons  in the C3B/C3N bilayer