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Spin-orbit interaction (SOI) offers a nonferromagnetic scheme to realize spinpolarization through utilizing an electric field. Electrically tunable SOIthrough electrostatic gates have been investigated, however, the relativelyweak and volatile tunability limit its practical applications in spintronics.Here, we demonstrate the nonvolatile electric-field control of SOI viaconstructing ferroelectric Rashba architectures, i.e., 2D Bi2O2Se/PMN-PTferroelectric field effect transistors. The experimentally observed weakantilocalization (WAL) cusp in Bi2O2Se films implies the Rashba-type SOI thatarises from asymmetric confinement potential. Significantly, taking advantageof the switchable ferroelectric polarization, the WAL-to-weak localization (WL)transition trend reveals the competition between spin relaxation and dephasingprocess, and the variation of carrier density leads to a reversible andnonvolatile modulation of spin relaxation time and spin splitting energy ofBi2O2Se films by this ferroelectric gating. Our work provides a scheme toachieve nonvolatile control of Rashba SOI with the utilization of ferroelectricremanent polarization.

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Reversible and nonvolatile manipulation of the spin-orbit interaction in  ferroelectric field-effect transistors based on a two-dimensional bismuth  oxychalcogenide