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We propose and analyze the terahertz (THz) detectors based on a gatedgraphene p-i-n (GPIN) field-effect transistor (FET) structure. Thereverse-biased i-region between the gates plays the role of the electrons andholes injectors exhibiting nonlinear $I-V$ characteristics due to theZener-Klein tunneling. This region enables the THz signal rectification, whichprovides their detection. The gated regions serve as the electron and holereservoirs and the THz resonant plasma cavities. The resonant excitation of theelectron and hole plasmonic oscillations results in a substantial increase inthe THz detector responsivity at the signal frequency close to the plasmafrequency and its harmonics. Due to the specifics of the i-region ACconductance frequency dependence, associated with the transit-time effects, theGPIN-FET response at the frequency, corresponding to the excitation of a higherplasmonic mode, can be stronger than for the fundamental mode. The GPIN-FETscan exhibit fairly high responsivity at room temperatures. Lowering of thelatter can result in its further enhancement due to weakening of the carriermomentum relaxation.

Resonant plasmonic terahertz detection in gated graphene p-i-n field-effect structures enabled by the Zener-Klein tunneling nonlinearity