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Increasing power densities in integrated circuits has led to an increasedprevalence of thermal hotspots in integrated circuits. Tracking these thermalhotspots is imperative to prevent circuit failures. In 3D integrated circuits,conventional surface techniques like infrared thermometry are unable to measure3D temperature distribution and optical and magnetic resonance techniques aredifficult to apply due to the presence of metals and large current densities.X-rays offer high penetration depth and can be used to probe 3D structures. Wereport a method utilizing the temperature dependence of x-rays diffractionintensity via the Debye-Waller factor to simultaneously map the temperature ofan individual silicon die that is a part of a stack of dies. Utilizing beamline1-ID-E at the Advanced Photon Source (Argonne), we demonstrate for eachindividual silicon die, a temperature resolution of 3 K, a spatial resolutionof 100 um x 400 um and a temporal resolution of 20 s. Utilizing a sufficientlyhigh intensity laboratory source, e.g., from a liquid anode source, this methodcan be scaled down to laboratories for non-invasive temperature mapping of 3Dintegrated circuits.

Temperature mapping of stacked silicon dies from x-ray diffraction intensities