English (United Kingdom)

https://curated-unify.zendy.io/wp-json/zendy-region/v1/featured_content/oa?rat=en

https://curated-unify.zendy.io/wp-json/zendy-region/v1/highlighted_journal/

Global: Zendy Plus annual

Presents the access of premium content as premium feature

Premium Content

Presents the keyphrase highlighting as premium feature

Keyphrase Highlighting

Presents the summarisation as premium feature

Summarisation

Insights

Presents the pdf analysis as premium feature

PDF Analysis

Presents the zaia usage as premium feature

ZAIA

Global: Zendy Tools annual

Global: Zendy Free Plan

Global: Zendy Tools monthly

Global: Zendy Plus monthly

Semiconductor spin qubits may show significant device-to-device variabilityin the presence of spin-orbit coupling mechanisms. Interface roughness, chargetraps, layout or process inhomogeneities indeed shape the real space wavefunctions, hence the spin properties. It is, therefore, important to understandhow reproducible the qubits can be, in order to assess strategies to cope withvariability, and to set constraints on the quality of materials andfabrication. Here we model the variability of single qubit properties (Larmorand Rabi frequencies) due to disorder at the Si/SiO$_2$ interface (roughness,charge traps) in metal-oxide-semiconductor devices. We consider both electronqubits (with synthetic spin-orbit coupling fields created by micro-magnets) andhole qubits (with intrinsic spin-orbit coupling). We show that charge traps aremuch more limiting than interface roughness, and can scatter Rabi frequenciesover one order of magnitude. We discuss the implications for the design of spinqubits and for the choice of materials.

Variability of electron and hole spin qubits due to interface roughness and charge traps