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We determine the diffusion length of excess carriers in GaN by spatiallyresolved cathodoluminescence spectroscopy utilizing a single quantum well ascarrier collector or carrier sink. Monochromatic intensity profiles across thequantum well are recorded for temperatures between 10 and 300 K. A classicaldiffusion model accounts for the profiles acquired between 120 and 300 K, whilefor temperatures lower than 120 K, a quantum capture process has to be takeninto account in addition. Combining the diffusion length extracted from theseprofiles and the effective carrier lifetime measured by time-resolvedphotoluminescence experiments, we deduce the carrier diffusivity as a functionof temperature. The experimental values are found to be close to theoreticalones for the ambipolar diffusivity of free carriers limited only by intrinsicphonon scattering. This agreement is shown to be fortuitous. The highdiffusivity at low temperatures instead originates from an increasingparticipation of excitons in the diffusion process.

Carrier diffusion in GaN -- a cathodoluminescence study. II: Ambipolar vs. exciton diffusion