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We demonstrate that the injection of the ballistic electrons into thetwo-dimensional electron plasma in lateral n$^+$-i-n-n$^+$ graphenefield-effect transistors (G-FET) might lead to a substantial Coulomb drag ofthe quasi-equilibrium electrons due the violation of the Galilean and Lorentzinvariance in the systems with a linear electron dispersion. This effect canresult in the S-shaped current-voltage characteristics (IVs). The resultingnegative differential conductivity enables the hysteresis effects and currentfilamentation that can be used for the implementation of voltage switchingdevices. Due to a strong nonlinearity of the IVs, the G-FETs can be used for aneffective frequency multiplication and detection of terahertz radiation.

physical review applied

S-shaped current-voltage characteristics of n+-i-n-n+ graphene  field-effect transistors due the Coulomb drag of quasi-equilibrium electrons  by ballistic electrons