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Voltage-gate assisted spin-orbit torque (VGSOT) writing scheme combines theadvantages from voltage control of magnetic anisotropy (VCMA) and spin-orbittorque (SOT) effects, enabling multiple benefits for magnetic random accessmemory (MRAM) applications. In this work, we give a complete description ofVGSOT writing properties on perpendicular magnetic tunnel junction (pMTJ)devices, and we propose a detailed methodology for its electricalcharacterization. The impact of gate assistance on the SOT switchingcharacteristics are investigated using electrical pulses down to 400ps. TheVCMA coefficient ({\xi}) extracted from current switching scheme is found to bethe same as that from the magnetic field switch method, which is in the orderof 15fJ/Vm for the 80nm to 150nm devices. Moreover, as expected from the pureelectronic VCMA effect, {\xi} is revealed to be independent of the writingspeed and gate length. We observe that SOT switching current characteristicsare modified linearly with gate voltage (V_g), similar as for the magneticproperties. We interpret this linear behavior as the direct modification ofperpendicular magnetic anisotropy (PMA) and nucleation energy induced by VCMA.At V_g = 1V, the SOT write current is decreased by 25%, corresponding to a 45%reduction in total energy down to 30fJ/bit at 400ps speed for the 80nm devicesused in this study. Further, the device-scaling criteria are proposed, and wereveal that VGSOT scheme is of great interest as it can mitigate the complexmaterial requirements of achieving high SOT and VCMA parameters for scaledMTJs. Finally, how that VGSOT-MRAM can enable high-density arrays close to twoterminal geometries, with high-speed performance and low-power operation,showing great potential for embedded memories as well as in-memory computingapplications at advanced technology nodes.

Voltage-Gate Assisted Spin-Orbit Torque Magnetic Random Access Memory for High-Density and Low-Power Embedded Application