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Semiconductor quantum dots (QDs) are being regarded as the primary unit for awide range of advanced and emerging technologies including electronics,optoelectronics, photovoltaics and biosensing applications as well as thedomain of q-bits based quantum information processing. Such QDs are suitablefor several novel device applications for their unique property of confiningcarriers 3-dimensionally creating discrete quantum states. However, therealization of such QDs in practice exhibits serious challenge regarding theirfabrication in array with desired scalability and repeatability as well ascontrol over the quantum states at room temperature. In this context, thecurrent work reports the fabrication of an array of highly scaled Ge-nanowire(radius ~25 nm) based vertical metal-oxide-semiconductor devices that canoperate as voltage tunable quantum dots at room temperature. The electrons insuch nanowire experience a geometrical confinement in the radial direction,whereas, they can be confined axially by tuning the applied bias in order tomanipulate the quantum states. Such quantum confinement of electrons has beenconfirmed from the step-like responses in the room temperaturecapacitance-voltage (C-V) characteristics at relatively low frequency (200kHz). Each of such steps has observed to encompass convolution of the quantizedstates occupying ~6 electronic charges. The details of such carrier confinementare analyzed in the current work by theoretically modeling the device transportproperties based on non-equilibrium Green's function (NEGF) formalism.

Voltage tunable quantum dot array by patterned Ge-nanowire based metal-oxide-semiconductor (MOS) devices