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Accurate modeling of charge transport and both thermal and luminescentradiation is crucial to the understanding and design of radiative thermalenergy converters. Charge carrier dynamics in semiconductors are well-describedby the Poisson-drift-diffusion equations, and thermal radiation inemitter/absorber structures can be computed using multilayer fluctuationalelectrodynamics. These two types of energy flows interact through radiationabsorption/luminescence and charge carrier generation/recombination. However,past research has typically only assumed limited interaction, with thermalradiation absorption as an input for charge carrier models to predict deviceperformance. To examine this assumption, we develop a fully-coupled iterativemodel of charge and radiation transport in semiconductor devices, and we useour model to analyze near-field and far-field GaSb thermophotovoltaic andthermoradiative systems. By comparing our results to past methods that do notconsider cross-influences between charge and radiation transport, we find thata fully-coupled approach is necessary to accurately model photon recycling andnear-field enhancement of external luminescence. Because these effects cansubstantially alter device performance, our modeling approach can aid in thedesign of efficient thermophotovoltaic and thermoradiative systems.

Coupled Charge and Radiation Transport Processes in Thermophotovoltaic and Thermoradiative Cells