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Silicon quantum dot qubits must contend with low-lying valley excited stateswhich are sensitive functions of the quantum well heterostructure and disorder;quantifying and maximizing the energies of these states are critical toimproving device performance. We describe a spectroscopic method for probingexcited states in isolated Si/SiGe double quantum dots using standard basebandpulsing techniques, easing the extraction of energy spectra in multiple-dotdevices. We use this method to measure dozens of valley excited state energiesspanning multiple wafers, quantum dots, and orbital states, crucial forevaluating the dependence of valley splitting on quantum well width and otherepitaxial conditions. Our results suggest that narrower wells can be beneficialfor improving valley splittings, but this effect can be confounded byvariations in growth and fabrication conditions. These results underscore theimportance of valley splitting measurements for guiding the development of Siqubits.

Detuning Axis Pulsed Spectroscopy of Valley-Orbital States in Si/SiGe Quantum Dots