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The insulator-to-metal transition in Mott insulators is the key mechanism fora novel class of electronic devices, belonging to the Mottronics family.Intense research efforts are currently devoted to the development of specificcontrol protocols, usually based on the application of voltage, strain,pressure and light excitation. The ultimate goal is to achieve the completecontrol of the electronic phase transformation, with dramatic impact on theperformance, for example, of resistive switching devices. Here, we investigatethe simultaneous effect of external voltage and excitation by ultrashort lightpulses on a single Mottronic device based on a V$_2$O$_3$ epitaxial thin film.The experimental results, supported by finite-element simulations of thethermal problem, demonstrate that the combination of light excitation andexternal electrical bias drives a volatile resistivity drop which goes beyondthe combined effect of laser and Joule heating. Our results impact on thedevelopment of protocols for the non-thermal control of the resistive switchingtransition in correlated materials.

Non-thermal light-assisted resistance collapse in a V$_2$O$_3$-based Mott-insulator device