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Typical ferroelectrics possess a large spontaneous polarization Ps butsimultaneously a large remnant polarization Pr as well, resulting in aninferior energy storage density.A mechanism that can reduce the Pr whilemaintain the Ps is demanded to enhance the energy storage property offerroelectrics.In the present study, it is shown that after acceptor doping andaging treatment, the domain switching in ferroelectrics becomes reversible,giving rise to a pinched double hysteresis loop. The pinched loop with a largePs and a small Pr thus results in an enhanced energy storage density. Thephysics behind is a defect induced internal field that provides a restoringforce for the domains to switch back.The idea is demonstrated through atime-dependent Ginzburg-Landau simulation as well as experimental measurementsin BaTiO$_3$ based single crystal and ceramics. The mechanism is general andcan be applied to various ferroelectrics, especially the environment-friendlyones.

Enhanced energy storage density by reversible domain switching in acceptor doped ferroelectrics