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The control of spin-dependent properties by voltage, not involvingmagnetization switching, has significant advantages for low-power spintronics.Here, we predict that the interfacial crystal Hall effect (ICHE) can serve forthis purpose. We show that the ICHE can occur in heterostructures composed ofcompensated antiferromagnetic metals and non-magnetic insulators due to reducedsymmetry at the interface, and it can be made reversible if the antiferromagnetis layered symmetrically between two identical ferroelectric layers. Weexplicitly demonstrate this phenomenon using density functional theorycalculations for three material systems: MnBi$_{2}$Te$_{4}$/GeI$_{2}$ andtopological In$_{2}$Te$_{3}$/MnBi$_{2}$Te$_{4}$/In$_{2}$Te$_{3}$ van der Waalsheterostructures, and GeTe/Ru$_{2}$MnGe/GeTe heterostructure composed ofthree-dimensional materials. We show that all three systems reveal a sizableICHE, while the latter two exhibit a quantum ICHE and ICHE, respectively,reversible with ferroelectric polarization. Our proposal opens an alternativedirection for voltage controlled spintronics and offers not yet exploredpossibilities for functional devices by heterostructure design.

Interfacial crystal Hall effect reversible by ferroelectric polarization