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Schottky barrier inhomogeneities are expected at the metal/TMDC interface andthis can impact device performance. However, it is difficult to account for thedistribution of interface inhomogeneity as most techniques average over thespot-area of the analytical tool, or the entire device measured for electricalI-V measurements. Commonly used models to extract Schottky barrier heights(SBH) neglect or fail to account for such inhomogeneities, which can lead tothe extraction of incorrect SBH and Richardson constants. Here, we show that agaussian modified thermionic emission model gives the best fit to experimentalI-V-T data of van der Waals Au/p-MoS2 interfaces and allow the deconvolution ofthe SBH of the defective regions from the pristine region. By the inclusion ofa gaussian distributed SBH in the macroscopic I-V-T analysis, we demonstratethat interface inhomogeneities due to defects are deconvoluted and wellcorrelated to the impact on the device behavior across a wide temperature rangefrom room temperature of 300 K down to 120 K. We verified the gaussianthermionic model across two different types of p-MoS2 (geological andsynthetic), and finally compared the macroscopic SBH with the results of ananoscopic technique, ballistic hole emission microscopy (BHEM). The resultsobtained using BHEM were consistent with the pristine Au/p-MoS2 SBH extractedfrom the gaussian modified thermionic emission model over hundreds ofnanometers. Our findings show that the inclusion of Schottky barrierinhomogeneities in the analysis of I-V-T data is important to elucidate theimpact of defects (e.g. grain boundaries, metallic impurities, etc.) and hencetheir influence on device behavior. We also find that the Richardson constant,a material specific constant typically treated as merely a fitting constant, isan important parameter to check for the validity of the transport model.

A Gaussian Thermionic Emission Model for Analysis of Au/MoS2 Schottky Barrier Devices