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The defect induced interfacial states are created in an atomically thintwo-dimensional molybdenum disulfide channel by underlying a narrow pattern ofa graphene layer in a field effect transistor. Nondestructive method for thegeneration of charge-state allowed a highly sensitive molecular interactionwith the sensitivity of nearly three-order of magnitude at room temperature.The presence of interfacial states in the channel lead to a conductancefluctuation and its magnitude is modulated using the nitrogen dioxide gasmolecules in the subthreshold region. The study provides a systematic approachto establish a correlation between modulated conductance fluctuation and themolecular concentration upto parts-per-billion. First-principles densityfunctional theory further explains the role of unique interfacial configurationon conductance fluctuation. Therefore, our study demonstrates an experimentalapproach to induce charge-state for the modulation of carrier concentration andexploits the role of defect induced interfacial states in atomically thininterfaces for the molecular interaction.

Role of Defect Induced Interfacial States in Molecular Sensing: Ultrahigh- Sensitive Region for Molecular Interaction