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We study current-induced deterministic magnetization switching and domainwall motion via polar Kerr microscopy in all-amorphousW$_{66}$Hf$_{34}$/CoFeB/TaO$_\text{x}$ with perpendicular magnetic anisotropyand large spin Hall angle. Investigations of magnetization switching as afunction of in-plane assist field and current pulse-width yield switchingcurrent densities as low as $3\times 10^{9}$ A/m$^2$. We accredit this lowswitching current density to a low depinning current density, which wasobtained from measurements of domain wall displacements upon current injection.This correlation is verified by investigations of a Ta/CoFeB/MgO/Ta referencesample, which showed critical current densities of at least one order ofmagnitude larger, respectively.

Ultra-low switching current density in all-amorphous W-Hf / CoFeB / TaOx films