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Electric-field control of magnetization dynamics is fundamentally andtechnologically important for future spintronic devices. Here, based onelectric-field control of both magnetic anisotropy and spin--orbit torque, twodistinct methods are presented for switching the magnetization in topologicalinsulator (TI)/magnetic-TI hybrid systems. The magnetic anisotropy energy inmagnetic TIs is formulated analytically as a function of the Fermi energy, andit is confirmed that the out-of-plane magnetization is always favored for thepartially occupied surface band. Also proposed is a transistor-like device withthe functionality of a nonvolatile magnetic memory that uses voltage-drivenwriting and the (quantum) anomalous Hall effect for readout. For themagnetization reversal, by using parameters of Cr-dopedBi_{1-x}Sb_{x})_{2}Te_{3}, the estimated source-drain current density and gatevoltage are of the orders of $10^4$--$10^5$~A/cm$^2$ and 0.1~V, respectively,below 20~K and the writing requires no external magnetic field. Also discussedis the possibility of magnetization switching by the proposed method inTI/ferromagnetic-insulator bilayers with the magnetic proximity effect.

Voltage-driven Magnetization Switching via Dirac Magnetic Anisotropy and Spin--orbit Torque in Topological-insulator-based Magnetic Heterostructures