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Electric and thermoelectric properties of strictly monolayer MoS$_2$ films,which are grown using a novel micro-cavity based CVD growth technique, havebeen studied under diverse environmental and annealing conditions. Resistanceof a thermoelectric device that is fabricated on a continuous monolayer MoS$_2$layer using photolithography technique has been found to reduce by about sixorders of magnitudes upon annealing in vacuum at 525 K. Seebeck coefficient ofthe layer also reduces by almost an order of magnitude upon annealing. When thesample is exposed to oxygen atmosphere, these parameters return to theirprevious values. In fact, it has been found that the electron concentration,mobility as well as the thermoelectric power of the material can be tuned bycontrolling the temperature of annealing and oxygen exposure. Once established,these values are maintained as long as the layer is not exposed to oxygenenvironment. This can offer a unique way to control doping in the materialprovided an effective encapsulation method is devised. Such control is animportant step forward for device application. The effect has been attributedto the passivation of di-sulfur vacancy donors present in the MoS$_2$ film byphysisorbed oxygen molecules. Band structural calculations using densityfunctional theory have been carried out, results of which indeed validate thispicture.

Tunability of electrical and thermoelectrical properties of monolayer MoS$_2$ through oxygen passivation