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Spin-diodes are usually resonant in nature (GHz frequency) and tuneable bymagnetic field and bias current with performances, in terms of sensitivity andminimum detectable power, overcoming the semiconductor counterpart, i.e.Schottky diodes. Recently, spin diodes characterized by a low frequencydetection (MHz frequency) have been proposed. Here, we show a strategy todesign low frequency detectors based on magnetic tunnel junctions having theinterfacial perpendicular anisotropy of the same order of the demagnetizingfield out-of-plane component. Micromagnetic calculations show that to reachthis detection regime a threshold input power has to be overcome and the phaseshift between the oscillation magnetoresistive signal and the inputradiofrequency current plays the key role in determining the value of therectification voltage.

Low frequency non-resonant rectification in spin-diodes