English (United Kingdom)

https://curated-unify.zendy.io/wp-json/zendy-region/v1/featured_content/oa?rat=en

https://curated-unify.zendy.io/wp-json/zendy-region/v1/highlighted_journal/

Global: Zendy Plus annual

Presents the access of premium content as premium feature

Premium Content

Presents the keyphrase highlighting as premium feature

Keyphrase Highlighting

Presents the summarisation as premium feature

Summarisation

Insights

Presents the pdf analysis as premium feature

PDF Analysis

Presents the zaia usage as premium feature

ZAIA

Global: Zendy Tools annual

Global: Zendy Free Plan

Global: Zendy Tools monthly

Global: Zendy Plus monthly

The discovery of ferroelectric polarization in HfO2-based ultrathin films hasspawned a lot of interest due to their potential applications in data storage.Recently, a new R3m rhombohedral phase was proposed to be responsible for theemergence of ferroelectricity in the [111]-oriented Hf0.5Zr0.5O2 thin films,but the fundamental mechanism of ferroelectric polarization in such filmsremains poorly understood. In this paper, we employ density-functional-theorycalculations to investigate structural and polarization properties of the R3mHfO2 phase. We find that the film thickness and in-plane compressive straineffects play a key role in stabilizing the R3m phase leading to robustferroelectricity of [111]-oriented R3m HfO2.

Effects of Strain and Film Thickness on the Stability of the Rhombohedral Phase of HfO2