English (United Kingdom)

https://curated-unify.zendy.io/wp-json/zendy-region/v1/featured_content/oa?rat=en

https://curated-unify.zendy.io/wp-json/zendy-region/v1/highlighted_journal/

Global: Zendy Plus annual

Presents the access of premium content as premium feature

Premium Content

Presents the keyphrase highlighting as premium feature

Keyphrase Highlighting

Presents the summarisation as premium feature

Summarisation

Insights

Presents the pdf analysis as premium feature

PDF Analysis

Presents the zaia usage as premium feature

ZAIA

Global: Zendy Tools annual

Global: Zendy Free Plan

Global: Zendy Tools monthly

Global: Zendy Plus monthly

Power dissipation is a great challenge for the continuous scaling down andperformance improvement of CMOS technology, due to thermionic current switchinglimit of conventional MOSFETs. In this work, we show that this problem can beovercome by using cold metals as the transistor's injection source, which aredifferent from conventional metals and can filter high energy electrons tobreak the Boltzmann tyranny. It is proved that the subthreshold swing (SS) ofthermionic current of transistor using cold metal contact can be extremelysmaller than 60 mV/decade at room temperature. Specifically, two-dimensional(2D) transition metal chalcogenide (TMD) cold metals of NbX$_2$ andTaX$_2$(X=S, Se, Te) are proposed as the injection source of FETs. Quantumtransport simulations indicate that promising switching efficiency and on-statecurrent can be achieved using TMD cold metal injection source, which isbeneficial for energy efficient applications.

Sub-60 mV/decade switching with a cold metal as the injection source