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The negative differential resistance (NDR) response of Nb/NbOx/Pt cross-pointdevices is shown to have a polarity dependence due to the effect of themetal/oxide Schottky barriers on the contact resistance. Three distinctresponses are observed under opposite polarity testing: bipolar S-type NDR,bipolar snap-back NDR, and combined S-type and snap-back NDR, depending on thestoichiometry of the oxide film and device area. In-situ thermoreflectanceimaging is used to show that these NDR responses are associated with strongcurrent localisation, thereby justifying the use of a previously developedtwo-zone, core shell thermal model of the device. The observed polaritydependent NDR responses, and their dependence on stoichiometry and area arethen explained by extending this model to include the effect of the polaritydependent contact resistance. This study provides an improved understanding ofthe NDR response of metal/oxide/metal structures and informs the engineering ofdevices for neuromorphic computing and non-volatile memory applications.

Schottky barrier induced asymmetry in the negative differential resistance response of Nb/NbOx/Pt cross-point devices