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The thermalization of non-equilibrium charge carriers is at the heart ofthermoelectric energy conversion. In nanoscale systems, the equilibrationlength can be on the order of the system size, leading to a situation wherethermoelectric effects need to be considered as spatially distributed, ratherthan localized at junctions. The energy exchange between charge carriers andphonons is of fundamental scientific and technological interest, but theirassessment poses significant experimental challenges. We addressed thesechallenges by imaging the temperature change induced by Peltier effects incrystal phase engineered InAs nanowire (NW) devices. Using high-resolutionscanning thermal microscopy (SThM), we have studied current-carrying InAs NWs,which feature a barrier segment of wurtzite (WZ) of varying length in a NW ofotherwise zincblende (ZB) crystal phase. The energy barrier acts as a filterfor electron transport around the Fermi energy, giving rise to a thermoelectriceffect. We find that thermalization through electron-phonon heat exchangeextends over the entire device. We analyze the temperature profile along ananowire by comparing it to spatially dependent heat diffusion and electronthermalization models. We are able to extract the governing properties of thesystem, including the electron thermalization length of $223 \pm 9$\,nm,Peltier coefficient and Seebeck coefficient introduced by the barrier of $39\pm 7$\,mV and $89 \pm 21$\,$\mu$V/K, respectively, and a thermal conductivityalong the wire axis of $8.9 \pm 0.5$\,W/m/K. Finally, we compare two ways toextract the elusive thermal boundary conductance between NW and underlyingsubstrate.

Imaging the Thermalization of Hot Carriers After Thermionic Emission Over a Polytype Barrier