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1 Laboratory for Photovoltaics, Department of Physics and Materials Science, University of Luxembourg, 41 rue du Brill, L-4422 Belvaux, Luxembourg 2 Institute for Solar Energy Research Hamelin (ISFH), Am Ohrberg 1, D-31860 Emmerthal, Germany 3 Materials Research and Technology (MRT) Department, Luxembourg Institute of Science and Technology (LIST), 41 rue du Brill, L-4422 Belvaux, Luxembourg 4 Department of Solar Energy, Institute of Solid-State Physics, Leibniz University Hannover, Appelstr. 2, D-30167 Hannover, Germany

physical review applied

Oxidation as Key Mechanism for Efficient Interface Passivation in <mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline" overflow="scroll"><mml:mi>Cu</mml:mi><mml:mo stretchy="false">(</mml:mo><mml:mi>In</mml:mi><mml:mo>,</mml:mo><mml:mi>Ga</mml:mi><mml:mo stretchy="false">)</mml:mo><mml:msub><mml:mi>Se</mml:mi><mml:mn>2</mml:mn></mml:msub></mml:math> Thin-Film Solar Cells

Oxidation as Key Mechanism for Efficient Interface Passivation in Cu(In,Ga)Se2 Thin-Film Solar Cells