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We present a detailed theoretical analysis of the electronic and opticalproperties of c-plane InGaN/GaN quantum well structures with In contentsranging from 5% to 25%. Special attention is paid to the relevance of alloyinduced carrier localization effects to the green gap problem. Studying thelocalization length and electron-hole overlaps at low and elevatedtemperatures, we find alloy-induced localization effects are crucial for theaccurate description of InGaN quantum wells across the range of In contentstudied. However, our calculations show very little change in the localizationeffects when moving from the blue to the green spectral regime; i.e. when theinternal quantum efficiency and wall plug efficiencies reduce sharply, forinstance, the in-plane carrier separation due to alloy induced localizationeffects change weakly. We conclude that other effects, such as increased defectdensities, are more likely to be the main reason for the green gap problem.This conclusion is further supported by our finding that the electronlocalization length is large, when compared to that of the holes, and changeslittle in the In composition range of interest for the green gap problem. Thuselectrons may become increasingly susceptible to an increased (point) defectdensity in green emitters and as a consequence the nonradiative recombinationrate may increase.

Polar InGaN/GaN quantum wells: Revisiting the impact of carrier localization on the green gap problem