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We develop a generalized theory for the scattering process produced byinterface roughness on charge carriers and which is suitable for anysemiconductor heterostructure. By exploiting our experimental insights into thethree-dimensional atomic landscape obtained on Ge/GeSi heterointerfacesobtained by atom probe tomography, we have been able to define the full set ofinterface parameters relevant to the scattering potential, including both thein-plane and axial correlation inside real diffuse interfaces. Our experimentalfindings indicate a partial coherence of the interface roughness along thegrowth direction within the interfaces. We show that it is necessary to includethis feature, previously neglected by theoretical models, when heterointerfacescharacterized by finite interface widths are taken into consideration.

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Atomic-scale insights into semiconductor heterostructures: from  experimental three-dimensional analysis of the interface to a generalized  theory of interface roughness scattering