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Electron and hole trapping was studied in the Ce3+ and Pr3+ doped Lu2Si2O7scintillation single crystals (LPS:Ce and LPS:Pr) by Electron ParamagneticResonance (EPR). Detailed EPR measurements of the X-ray irradiated LPS crystalsrevealed that holes generated by irradiation are predominantly trapped atoxygen lattice ions creating O- centers. The same X-ray irradiation createsalso electron type centers which were attributed to Lu2+ ions, where thetrapped electron at Lu lattice ion is stabilized by a defect nearby, such asoxygen vacancy and Ir3+ impurity ion. Both the hole and electron centers can bethus considered as a bound small polarons, which makes the charge trapping inscintillation mechanism quite competitive. The hole O- and electron Lu2+centers show thermal stability well above room temperature. The thermal decaysof their concentrations correlate well with the appearance of the thermallystimulated luminescence glow peaks at 470-550 K. The presence of the sameintrinsic traps in the Ce and Pr doped LPS crystals suggests that difference inthe light yield of these crystals is an intrinsic property of the Ce3+ and Pr3+activator centers in LPS lattice. Charge traps origin in this pyrosilicatestructure and their role in scintillation mechanism is compared with theresults previously described in literature in orthosilicates.

Electron and hole trapping in the Ce3+ and Pr3+ doped lutetium pyrosilicate scintillator crystals studied by electron paramagnetic resonance