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The recent demonstration of resonant tunneling transport in nitridesemiconductors has led to an invigorated effort to harness this quantumtransport regime for practical applications. In polar semiconductors, however,the interplay between fixed polarization charges and mobile free carriers leadsto asymmetric transport characteristics. Here, we investigate the possibilityof using degenerately doped contact layers to screen the built-in polarizationfields and recover symmetric resonant injection. Thanks to a high dopingdensity, negative differential conductance is observed under both biaspolarities of GaN/AlN resonant tunneling diodes (RTDs). Moreover, ouranalytical model reveals a lower bound for the minimum resonant-tunnelingvoltage achieved via uniform doping, owing to the dopant solubility limit.Charge storage dynamics is also studied by impedance measurements, showing thatat close-to-equilibrium conditions, polar RTDs behave effectively asparallel-plate capacitors. These mechanisms are completely reproduced by ouranalytical model, providing a theoretical framework useful in the design andanalysis of polar resonant-tunneling devices.

Fighting Broken Symmetry with Doping: Toward Polar Resonant Tunneling Diodes with Symmetric Characteristics