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Magnetoelectric composites are an important class of multiferroic materialsthat pave the way towards a new generation of multifunctional devices directlyintegrable in data storage technology and spintronics. This study focuses onstrain-mediated electrical manipulation of magnetization in an extrinsicmultiferroic. The composite includes 5 nm or 60 nm Fe$_{81}$Ga$_{19}$ thinfilms coupled to a piezoelectric (011)-PMN-PZT. The magnetization reversalstudy reveals a converse magnetoelectric coefficient $\alpha_\mathrm{CME,max}\approx 2.7 \times {10^{-6}}$ s.m$^{-1}$ at room temperature. This reportedvalue of $\alpha_\mathrm{CME}$ is among the highest so far compared to previousreports of single-phase multiferroics as well as composites. An angulardependency of $\alpha_\mathrm{CME}$ is also shown for the first time, arisingfrom the intrinsic magnetic anisotropy of FeGa. The highly efficientmagnetoelectric composite FeGa/PMN-PZT demonstrates drastic modifications ofthe in-plane magnetic anisotropy, with an almost 90$^{\circ}$ rotation of thepreferential anisotropy axis in the thinner films under an electric field E =10.8 kV.cm$^{-1}$. Also, the influence of thermal strain on the bilayer'smagnetic coercivity is compared to that of a reference bilayer FeGa/Glass atcryogenic temperatures. A different evolution is observed as a function oftemperature, revealing a substrate thermo-mechanical influence which has notyet been reported in FeGa thin films coupled to a piezoelectric material.

Electrical manipulation of magnetic anisotropy in a Fe$_{81}$Ga$_{19}$/PMN-PZT magnetoelectric multiferroic composite