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Van der Waals heterostructures formed by stacking different atomically thinlayered materials have emerged as the sought-after device platform forelectronic and optoelectronic applications. Determining the spatial extent ofall the encapsulated components in such vertical stacks is key to optimalfabrication methods and improved device performance. Here we employelectrostatic force microscopy as a fast and non-invasive microscopic probethat provides compelling images of two dimensional layers buried over 30 nmbelow the sample surface. We demonstrate the versatility of the technique bystudying heterojunctions comprising graphene, hexagonal boron nitride andtransition metal dichalcogenides. Work function of each constituent layer actsas a unique fingerprint during imaging, thereby providing important insightsinto the charge environment, disorder, structural imperfections and dopingprofile. The technique holds great potential for gaining a comprehensiveunderstanding of the quality, flatness as well as local electrical propertiesof buried layers in a large class of nanoscale materials and verticalheterostructures.

A non-invasive sub-surface electrical probe to encapsulated layers in van der Waals heterostructures