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We report a comprehensive study of the maximization of the spin Hall ratio({\theta}SH) in Pt thin films by the insertion of sub-monolayer layers of Ti todecrease carrier lifetime while minimizing the concurrent reduction in the spinHall conductivity. We establish that the intrinsic spin Hall conductivity ofPt, while robust against the strain and the moderate interruption of crystalorder caused by these insertions, begins to decrease rapidly at highresistivity level because of the shortening carrier lifetime. The unavoidabletrade-off between the intrinsic spin Hall conductivity and carrier lifetimesets a practical upper bound of {\theta}SH >=0.8 for heterogeneous materialswhere the crystalline Pt component is the source of the spin Hall effect andthe resistivity is increased by shortening carrier lifetime. This work alsoestablishes a very promising spin-Hall metal of [Pt 0.75 nm/Ti 0.2 nm]7/Pt 0.75nm for energy-efficient, high-endurance spin-orbit torque technologies (e.g.,memories, oscillators, and logic) due to its combination of a giant {\theta}SHof 0.8, or equivalently a dampinglike spin torque efficiency per unit currentdensity of 0.35, with a relatively low resistivity (90 uOhm cm) and highsuitability for practical technology integration.

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Maximizing the spin-orbit torque efficiency of Pt/Ti multilayers by  optimization of the tradeoff between the intrinsic spin Hall conductivity and  carrier lifetime