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Coherent super-high-frequency (SHF) vibrations provide an excellent tool forthe modulation and control of excitations in semiconductors. Here, weinvestigate the piezoelectric generation and propagation of longitudinal bulkacoustic waves (LBAWs) with frequencies up to 20 GHz in GaAs crystals usingbulk acoustic wave resonators (BAWRs) based on piezoelectric thin ZnO films. Weshow that the electro-acoustic conversion efficiency of the BAWRs dependssensitively on the sputtering conditions of the ZnO films. The BAWRs were thenused for the study of the propagation properties of the LBAWs in GaAs in thefrequency and temperature ranges from 1 to 20 GHz and 10 and 300 K,respectively, which have so far not been experimentally accessed. We found thatthe intrinsic acoustic absorption of GaAs in the temperature range from 80 K to300 K is dominated by scattering with thermal phonons. At lower temperatures,in contrast, the intrinsic acoustic absorption saturates at afrequency-dependent value. Experiments carried out with different propagationlengths indicate that the saturation is associated with losses duringreflection at the sample boundaries. We also demonstrate devices with highquality factor fabricated on top of acoustic Bragg-reflectors. The resultspresented here prove the feasibility of high-quality acoustic resonatorsembedding GaAs-based nanostructures, thus opening the way for the modulationand control of their properties by electrically excited SHF LBAWs.

Generation and propagation of super-high-frequency bulk acoustic wave in GaAs