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Magneto-elastic (straintronic) switching of bistable magnetostrictivenanomagnets is an extremely energy-efficient switching methodology for(magnetic) binary switches that has recently attracted widespread attentionbecause of its potential application in ultra-low-power digital computinghardware. Unfortunately, this modality of switching is also error very prone atroom temperature. Theoretical studies of switching error probability ofmagneto-elastic switches have predicted probabilities ranging from 10E-8-10E-3at room temperature for ideal, defect-free nanomagnets, but experiments withreal nanomagnets show a much higher probability that exceeds 0.1 in some cases.The obvious spoilers that can cause this large difference are defects andnon-idealities. Here, we have theoretically studied the effect of commondefects (that occur during fabrication) on magneto-elastic switchingprobability in the presence of room-temperature thermal noise. Surprisingly, wefound that even small defects increase the switching error probabilities byorders of magnitude. There is usually a critical stress that leads to thelowest error probability and its value increases enormously in the presence ofdefects. All this could limit or preclude the application of magneto-elastic(straintronic) binary switches in either Boolean logic or memory, despite theirexcellent energy-efficiency, and restrict them to non-Boolean (e.g.neuromorphic, stochastic) computing applications. We also studied thedifference between magneto-elastic switching with a stress pulse of constantamplitude and sinusoidal time-varying amplitude (e.g. due to a surface acousticwave) and found that the latter method is more reliable and generates lowerswitching error probabilities in most cases, provided the time variation isreasonably slow.

Error Probability in Magneto-elastic Switching of Non-ideal Nanomagnets with Defects: A Case Study for the Viability of Straintronic Logic and Memory