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Unintentional doping of the active layer is a source for lowered deviceperformance in organic solar cells. The effect of doping is to induce aspace-charge region within the active layer, generally resulting in increasedrecombination losses. In this work, the impact of a doping-induced space-chargeregion on the current-voltage characteristics of low-mobility solar celldevices has been clarified by means of analytical derivations and numericaldevice simulations. It is found that, in case of a doped active layer, thecollection efficiency of photo-generated charge carriers is independent of thelight intensity and exhibits a distinct voltage dependence, resulting in anapparent electric-field dependence of the photocurrent. Furthermore, ananalytical expression describing the behavior of the photocurrent is derived.The validity of the analytical model is verified by numerical drift-diffusionsimulations and demonstrated experimentally on solution-processed organic solarcells. Based on the theoretical results, conditions of how to overcome chargecollection losses caused by doping are discussed. Furthermore, the presentedanalytical framework provides tools to distinguish between different mechanismsleading to voltage dependent photocurrents.

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Impact of a doping-induced space-charge region on the collection of  photo-generated charge carriers in thin-film solar cells based on  low-mobility semiconductors