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Efficient generation of single photons on demand at a high repetition rate isa key to the practical realization of quantum-communication networks andoptical quantum computations. Color centers in diamond are considered to be themost promising platform for building such single-photon sources owing to theoutstanding emission properties of color centers at room temperature. However,their efficient electrical excitation remains a challenge due to the inabilityto create a high density of free electrons in diamond. Here, we show that usingthe self-gating effect in a diamond p-i-n diode, one can overcome the dopingproblem and inject four orders of magnitude more carriers into the i-region ofthe diamond diode than the doping of the n-region allows. This high density offree electrons can be efficiently used to boost the single-photonelectroluminescence process and enhance the brightness of the single-photonsource by more than three orders of magnitude. Moreover, we show that such ahigh single-photon emission rate can be achieved at exceptionally low injectioncurrent densities of only 0.001 A/mm$^2$, which creates the backbone for thedevelopment of low-power and cost-efficient diamond quantum optoelectronicdevices for quantum information technologies.

Superinjection in diamond p-i-n diodes: bright single-photon electroluminescence of color centers beyond the doping limit