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N-type doping in Si by shallow impurities, such as P, As and Sb, exhibits anintrinsic limit due to the Fermi-level pinning via defect complexes at highdoping concentrations. Here we demonstrate that doping Si with the chalcogen Teby non-equilibrium processing, a deep double donor, can exceed this limit andyield higher electron concentrations. In contrast to shallow impurities, boththe interstitial Te fraction decreases with increasing doping concentration andsubstitutional Te dimers become the dominant configuration as effective donors,leading to a non-saturating carrier concentration as well as to aninsulator-to-metal transition. First-principle calculations reveal that the Tedimers possess the lowest formation energy and donate two electrons per dimerto the conduction band. These results provide novel insight into physics ofdeep impurities and lead to a possible solution for the ultra-high electronconcentration needed in today's Si-based nanoelectronics.

Breaking the doping limit in silicon by deep impurities